• DocumentCode
    805503
  • Title

    Post-breakdown oxide voltage oscillation in thin SiO2 under nano-scaled repetitive ramped voltage stress

  • Author

    Wu, Y.-L. ; Lin, S.-T.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Chi-Nan Univ., Nantou, Taiwan
  • Volume
    42
  • Issue
    2
  • fYear
    2006
  • Firstpage
    118
  • Lastpage
    120
  • Abstract
    The post-breakdown behaviour of a thin SiO2 layer on the same oxide location under repetitive ramped voltage stress using a conductive atomic force microscopy is reported for the first time. It was observed that the oxide voltage on the same spot decreases and then oscillates between certain smaller values after it is broken down. A mechanism based on permanent trap generation in the oxide accompanied with trap capture radius and trap energy level relaxation is proposed to explain the oxide voltage oscillation phenomenon.
  • Keywords
    MIS devices; atomic force microscopy; semiconductor device breakdown; semiconductor thin films; silicon compounds; SiO2; atomic force microscopy; permanent trap generation; post breakdown oxide voltage oscillation; repetitive ramped voltage stress; trap capture radius; trap energy level relaxation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20063577
  • Filename
    1582089
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=805503