Title :
Post-breakdown oxide voltage oscillation in thin SiO2 under nano-scaled repetitive ramped voltage stress
Author :
Wu, Y.-L. ; Lin, S.-T.
Author_Institution :
Dept. of Electr. Eng., Nat. Chi-Nan Univ., Nantou, Taiwan
Abstract :
The post-breakdown behaviour of a thin SiO2 layer on the same oxide location under repetitive ramped voltage stress using a conductive atomic force microscopy is reported for the first time. It was observed that the oxide voltage on the same spot decreases and then oscillates between certain smaller values after it is broken down. A mechanism based on permanent trap generation in the oxide accompanied with trap capture radius and trap energy level relaxation is proposed to explain the oxide voltage oscillation phenomenon.
Keywords :
MIS devices; atomic force microscopy; semiconductor device breakdown; semiconductor thin films; silicon compounds; SiO2; atomic force microscopy; permanent trap generation; post breakdown oxide voltage oscillation; repetitive ramped voltage stress; trap capture radius; trap energy level relaxation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20063577
