Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions

Author

Brederlow, Ralf ; Weber, Werner ; Schmitt-Landsiedel, Doris ; Thewes, Roland

Author_Institution

Infineon Technologies AG, Munich, Germany

Volume

49

Issue

9

fYear

2002

fDate

9/1/2002 12:00:00 AM

Firstpage

1588

Lastpage

1596

Abstract

We investigate the hot-carrier degradation of the 1/f-noise behavior of nand p-MOS transistors under typical bias conditions for analog and RF operation. The mechanisms responsible for the degradation and a model are discussed for both n- and p-MOS devices. A method for lifetime prediction concerning 1/f-noise degradation is presented and consequences for reliability assurance by measures of circuit design are drawn

Keywords

1/f noise; MOSFET; UHF field effect transistors; hot carriers; semiconductor device models; semiconductor device noise; semiconductor device reliability; 1/f-noise behavior; NMOSFET; PMOSFET; RF operation; analog operation; flicker noise; hot carrier stress; hot-carrier degradation; lifetime prediction; model; n-MOS transistors; n-MOSFET; p-MOS transistors; p-MOSFET; reliability assurance; 1f noise; Circuit noise; Degradation; Fluctuations; Hot carrier effects; Hot carriers; Low-frequency noise; MOSFET circuits; Radio frequency; Stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.802640

Filename

1027841