Quasi-drift diffusion model for the quantum dot intermediate band solar cell

Author

Martí, Antonio ; Cuadra, Lucas ; Luque, Antonio

Author_Institution

Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain

Volume

49

Issue

9

fYear

2002

fDate

9/1/2002 12:00:00 AM

Firstpage

1632

Lastpage

1639

Abstract

This paper describes the application of the drift-diffusion model in order to illustrate the operation of the quantum dot intermediate band solar cell (QD-IBSC) and its validity limits. The main particularities of the model arise from the fact that the intermediate band solar cell (IBSC) is a two-minority carrier device. The role of the current transport in the IB is discussed, providing the beneficial conditions in which this current approaches zero. The electric field is also related to the current density in the intermediate band. The conditions in which the contribution of the electron and hole drift currents is small when compared to the total current are discussed. The description of the operation of the cell is aided by means of a numerical example

Keywords

current density; minority carriers; semiconductor device models; semiconductor quantum dots; solar cells; QD-IBSC; current density; current transport; electron drift currents; hole drift currents; multiband solar cell; quantum dot intermediate band solar cell; quasi-drift diffusion model; two-minority carrier device; Charge carrier processes; Current density; Degradation; Electrons; Helium; Photonic band gap; Photovoltaic cells; Quantum dots; US Department of Transportation; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.802642

Filename

1027850