A monolithic field emitter array with a JFET

Author

Shimawaki, Hidetaka ; Tajima, Kunitoshi ; Mimura, Hidenori ; Yokoo, Kuniyoshi

Author_Institution

Fac. of Eng., Hachinohe Inst. of Technol., Japan

Volume

49

Issue

9

fYear

2002

fDate

9/1/2002 12:00:00 AM

Firstpage

1665

Lastpage

1668

Abstract

This paper proposes a novel structure of the conical Si field emitters monolithically incorporating a vertical-type junction field effect transistor (JFET) and demonstrates the emission control in field emission from the emitters. The proposal has many attractive advantages in the display application and reliable fabrication, because the structure needs neither additional area for the JFET nor additional process except ion implantation. The experimental results of the emitters show excellent controllability and stability in the emission current

Keywords

arrays; electron field emission; elemental semiconductors; field emission displays; junction gate field effect transistors; silicon; stability; vacuum microelectronics; FED; Si; conical Si field emitters; display application; electron emission; emission control; emission current stability; fabrication process; ion implantation; junction field effect transistor; monolithic FEA; monolithic field emitter array; reliable fabrication; vacuum microelectronics; vertical-type JFET; FETs; Fabrication; Field emitter arrays; Flat panel displays; Integrated circuit technology; MOSFET circuits; Microelectronics; Silicon; Stability; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.802628

Filename

1027860