DocumentCode :
805722
Title :
A monolithic field emitter array with a JFET
Author :
Shimawaki, Hidetaka ; Tajima, Kunitoshi ; Mimura, Hidenori ; Yokoo, Kuniyoshi
Author_Institution :
Fac. of Eng., Hachinohe Inst. of Technol., Japan
Volume :
49
Issue :
9
fYear :
2002
fDate :
9/1/2002 12:00:00 AM
Firstpage :
1665
Lastpage :
1668
Abstract :
This paper proposes a novel structure of the conical Si field emitters monolithically incorporating a vertical-type junction field effect transistor (JFET) and demonstrates the emission control in field emission from the emitters. The proposal has many attractive advantages in the display application and reliable fabrication, because the structure needs neither additional area for the JFET nor additional process except ion implantation. The experimental results of the emitters show excellent controllability and stability in the emission current
Keywords :
arrays; electron field emission; elemental semiconductors; field emission displays; junction gate field effect transistors; silicon; stability; vacuum microelectronics; FED; Si; conical Si field emitters; display application; electron emission; emission control; emission current stability; fabrication process; ion implantation; junction field effect transistor; monolithic FEA; monolithic field emitter array; reliable fabrication; vacuum microelectronics; vertical-type JFET; FETs; Fabrication; Field emitter arrays; Flat panel displays; Integrated circuit technology; MOSFET circuits; Microelectronics; Silicon; Stability; Thin film transistors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2002.802628
Filename :
1027860
Link To Document :
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