MOSFET mismatch modeling: a new approach

Author

Klimach, Hamilton ; Arnaud, Alfredo ; Galup-Montoro, Carlos ; Schneider, Márcio C.

Author_Institution

Dept. of Electr. Eng., Fed. Univ. of Rio Grande do Sul, Brazil

Volume

23

Issue

1

fYear

2006

Firstpage

20

Lastpage

29

Abstract

Digital and analog ICs generally rely on the concept of matched behavior between identically designed devices. Time-independent variations between identically designed transistors, called mismatch, affect the performance of most analog and even digital MOS circuits. This article focuses on the analysis of mismatch in MOS transistors resulting from random fluctuations of the dopant concentration, first studied by Keyes. Today, we recognize these fluctuations as the main cause of mismatch in bulk CMOS transistors.

Keywords

MOSFET; semiconductor device testing; semiconductor process modelling; MOS transistor mismatch; MOSFET mismatch modeling; analog IC; digital IC; dopant concentration random fluctuations; time-independent variations; CMOS process; CMOS technology; Doping; Fluctuations; Impurities; Integrated circuit modeling; MOSFET circuits; Semiconductor device modeling; Semiconductor process modeling; Solid modeling; MOSFET; integrated circuit design; matching; mismatch compact model; simulation;

fLanguage

English

Journal_Title

Design & Test of Computers, IEEE

Publisher

ieee

ISSN

0740-7475

Type

jour

DOI

10.1109/MDT.2006.20

Filename

1583535