Title :
A 54-GHz distributed amplifier with 6-VPP output for a 40-Gb/s LiNbO3 modulator driver
Author :
Shigematsu, Hisao ; Sato, Masaru ; Hirose, Tatsuya ; Watanabe, Yuu
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
9/1/2002 12:00:00 AM
Abstract :
We have developed a distributed amplifier for a LiNbO3 modulator driver using double-doped AlGaAs-InGaAs-AlGaAs pseudomorphic high electron mobility transistors (p-HEMTs). By using a stabilization and negative resistance control technique with source inductance and grounded coplanar waveguided lines, we obtained a gain of 15 dB, a bandwidth of 54 GHz, and 6-VPP output. These results indicate that our circuit is a leading candidate for use as a LiNbO3 modulator driver in 40-Gb/s fiber-optic communication systems.
Keywords :
HEMT integrated circuits; circuit stability; coplanar waveguides; distributed amplifiers; driver circuits; electro-optical modulation; field effect MIMIC; lithium compounds; millimetre wave amplifiers; negative resistance; optical communication equipment; wideband amplifiers; 15 dB; 40 Gbit/s; 54 GHz; AlGaAs-InGaAs-AlGaAs; LiNbO3; LiNbO3 modulator driver; distributed amplifier; double-doped PHEMTs; fiber-optic communication systems; grounded CPW lines; grounded coplanar waveguided lines; high electron mobility transistors; negative resistance control technique; pseudomorphic HEMTs; source inductance; stabilization technique; Bandwidth; Coplanar waveguides; Distributed amplifiers; Driver circuits; Electron mobility; Gain; HEMTs; Inductance; MODFETs; PHEMTs;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2002.801167
