Title :
A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits
Author :
Rickelt, Matthias ; Rein, Hans-Martin
Author_Institution :
Ruhr-Univ., Bochum, Germany
fDate :
9/1/2002 12:00:00 AM
Abstract :
A physics-based scalable transistor model is described which allows accurate consideration of avalanche-breakdown effects in bipolar circuit simulation. The three-dimensional model consists of six lumped transistor elements, which are connected via elements of the base and emitter-contact resistance. Analytical relations are given to calculate the elements of this six-transistor model (6TM) for arbitrary emitter dimensions from measured area- and length-specific transistor parameters. As a core of the transistor elements, all kinds of conventional transistor models can be used provided an adequate avalanche current source is implemented between the internal collector and base nodes. The validity of this 6TM has been verified under dc and fast transient conditions by simulations and measurements.
Keywords :
avalanche breakdown; bipolar integrated circuits; bipolar transistors; circuit simulation; impact ionisation; integrated circuit modelling; semiconductor device breakdown; semiconductor device models; transient response; Si; Si bipolar circuits; area-specific transistor parameters; avalanche current source; avalanche-breakdown effects simulation; base resistance; bipolar circuit simulation; dc conditions; emitter-contact resistance; fast transient conditions; impact ionization; length-specific transistor parameters; lumped transistor elements; physics-based scalable transistor model; six-transistor model; three-dimensional model; Area measurement; Bipolar transistor circuits; Bipolar transistors; Breakdown voltage; Circuit simulation; Electric breakdown; Electrical resistance measurement; Impact ionization; Length measurement; Power system modeling;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2002.801197
