DocumentCode
806638
Title
Influence of Selected Chemical Impurities on the Trapping Parameters of Ge(Li) Counters
Author
Henck, R. ; Stuck, R. ; Siffert, P. ; Schoenmaekers, W.K. ; De Laet, L.H.
Author_Institution
Laboratoire de Physique des Rayonnements et d´´Electronique Nucléaire Centre de Recherches Nucléaires Strasbourg, France
Volume
19
Issue
3
fYear
1972
fDate
6/1/1972 12:00:00 AM
Firstpage
299
Lastpage
305
Abstract
Specially grown P-type Ge crystals containing controlled quantities of various deep-level impurities have been studied. Measurements of the dependence of the recombination lifetimes on temperature in the P-type samples were used to determine the level position and the capture cross-section of the impurities. The trap parameters in N-I-P diodes were determined using a collimated beam of ¿-rays. Results are given for the following impurities: Ag, Cu, Zn, Cd, Cr, Te, Fe, Co and Pt. These impurities were examined in crystals with and without dislocations.
Keywords
Chemicals; Chromium; Collimators; Counting circuits; Crystals; Diodes; Impurities; Position measurement; Temperature dependence; Zinc;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1972.4326741
Filename
4326741
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