Title :
Electroluminescence From Two Junction Punch Through Structures in Silicon Nanowires
Author :
Du Plessis, Monuko ; Joubert, Trudi-Heleen
Author_Institution :
Dept. of ElectricalElectronic & Comput. Eng., Univ. of Pretoria, Pretoria, South Africa
Abstract :
Hot carrier electroluminescence in two junction devices under punch through conditions manufactured in silicon on insulator nanowires are investigated. Of interest is the spectral content of the light emission, as well as the external power efficiency and the light extraction efficiency. An order of magnitude improvement in external power efficiency was achieved relative to a bulk silicon p-n junction in avalanche.
Keywords :
electroluminescence; elemental semiconductors; integrated optics; nanophotonics; nanowires; optical fabrication; p-n junctions; silicon; silicon-on-insulator; Si; avalanche; bulk silicon p-n junction; external power efficiency; hot carrier electroluminescence; light emission; light extraction efficiency; silicon-on-insulator nanowires; spectral content; two junction devices; two junction punch; CMOS integrated circuits; Electric fields; Junctions; Nanowires; Optical films; Photonics; Silicon; SOI; hot carriers; nanowire; silicon electroluminescence;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2015.2438956
