Title :
Infrared Response Measurements on Radiation-Damaged Si(Li) Detectors
Author :
Sher, A.H. ; Liu, Y.M. ; Keery, W.J.
Author_Institution :
Institute for Applied Technology National Bureau of Standards Washington, D. C. 20234
fDate :
6/1/1972 12:00:00 AM
Abstract :
The improved infrared response (IRR) technique has been used to qualitatively compare radiation effects on Si(Li) detectors with energy levels reported for silicon in the literature. Measurements have been made on five commercial silicon detectors and one fabricated in-house, both before and after irradiation with fast neutrons, l.9-MeV protons, and 1.6-MeV electrons. Effects dependent upon the extent of radiation damage have been observed. It seems likely that the photo-EMF, or photovoltage, effect is the basic mechanism for the observation of IRR in p-i-n diodes with a wide i-region. Experimental characteristics of the IRR measurement are in agreement with those of the photovoltage effect.
Keywords :
Electrons; Energy states; Germanium; Infrared detectors; P-i-n diodes; Radiation detectors; Radiation effects; Semiconductor diodes; Semiconductor impurities; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1972.4326743
