Title :
Ion Implanted Contacts on Cadmium Telluride Detectors
Author :
Cornet, A. ; Hage-Ali, M. ; Grob, J.J. ; Stuck, R. ; Siffert, P.
Author_Institution :
Laboratoire de Physique des Rayonnements et d´´Electronique Nucléaire Centre de Recherches Nucléaires, Strasbourg, France
fDate :
6/1/1972 12:00:00 AM
Abstract :
Cadmium telluride single crystals have been grown by the vertical zone melting technique. Without added chemical impurities, they are generally N-type of 10-100 ¿. cm resistivity. Detectors have been prepared with this material by implanting Bi+ ions. The influence of the implant conditions and annealing treatments were studied. A FWHM of 24 keV has been obtained at 300° and 77° K for 5.5 MeV ¿-particles.
Keywords :
Cadmium compounds; Conductivity; Crystalline materials; Crystals; Detectors; Implants; Impurities; Ion implantation; Lattices; X-rays;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1972.4326750
