DocumentCode
806743
Title
Birefringence of disordered AlGaAs/GaAs quantum wells
Author
Li, E.H. ; Weiss, B.L.
Author_Institution
Surrey Univ., Guildford, UK
Volume
28
Issue
23
fYear
1992
Firstpage
2114
Lastpage
2115
Abstract
Birefringence at room temperature is analysed for interdiffusion induced (disordered) Al0.3Ga0.7As/GaAs single quantum well structures in the wavelength range 0.5 mu m to 1.0 mu m. The confinement profile for the disordered QW is modelled by an error function and the refractive index model includes excitonic effects and contributions from the Gamma , X and L Brillouin zones. Results show that at longer wavelengths the birefringence is small and varies from positive to negative before reducing to zero as interdiffusion proceeds. For wavelengths between the QW and barrier band-edges, the birefringence is large and reduces with increasing interdiffusion.
Keywords
III-V semiconductors; aluminium compounds; birefringence; chemical interdiffusion; gallium arsenide; semiconductor quantum wells; visible spectra of inorganic solids; 0.5 to 1 micron; Al 0.3Ga 0.7As-GaAs disordered quantum wells; Brillouin zones; birefringence; confinement profile; error function; excitonic effects; interdiffusion; refractive index model; single quantum well structures;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921356
Filename
172985
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