• DocumentCode
    806743
  • Title

    Birefringence of disordered AlGaAs/GaAs quantum wells

  • Author

    Li, E.H. ; Weiss, B.L.

  • Author_Institution
    Surrey Univ., Guildford, UK
  • Volume
    28
  • Issue
    23
  • fYear
    1992
  • Firstpage
    2114
  • Lastpage
    2115
  • Abstract
    Birefringence at room temperature is analysed for interdiffusion induced (disordered) Al0.3Ga0.7As/GaAs single quantum well structures in the wavelength range 0.5 mu m to 1.0 mu m. The confinement profile for the disordered QW is modelled by an error function and the refractive index model includes excitonic effects and contributions from the Gamma , X and L Brillouin zones. Results show that at longer wavelengths the birefringence is small and varies from positive to negative before reducing to zero as interdiffusion proceeds. For wavelengths between the QW and barrier band-edges, the birefringence is large and reduces with increasing interdiffusion.
  • Keywords
    III-V semiconductors; aluminium compounds; birefringence; chemical interdiffusion; gallium arsenide; semiconductor quantum wells; visible spectra of inorganic solids; 0.5 to 1 micron; Al 0.3Ga 0.7As-GaAs disordered quantum wells; Brillouin zones; birefringence; confinement profile; error function; excitonic effects; interdiffusion; refractive index model; single quantum well structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921356
  • Filename
    172985