DocumentCode :
806743
Title :
Birefringence of disordered AlGaAs/GaAs quantum wells
Author :
Li, E.H. ; Weiss, B.L.
Author_Institution :
Surrey Univ., Guildford, UK
Volume :
28
Issue :
23
fYear :
1992
Firstpage :
2114
Lastpage :
2115
Abstract :
Birefringence at room temperature is analysed for interdiffusion induced (disordered) Al0.3Ga0.7As/GaAs single quantum well structures in the wavelength range 0.5 mu m to 1.0 mu m. The confinement profile for the disordered QW is modelled by an error function and the refractive index model includes excitonic effects and contributions from the Gamma , X and L Brillouin zones. Results show that at longer wavelengths the birefringence is small and varies from positive to negative before reducing to zero as interdiffusion proceeds. For wavelengths between the QW and barrier band-edges, the birefringence is large and reduces with increasing interdiffusion.
Keywords :
III-V semiconductors; aluminium compounds; birefringence; chemical interdiffusion; gallium arsenide; semiconductor quantum wells; visible spectra of inorganic solids; 0.5 to 1 micron; Al 0.3Ga 0.7As-GaAs disordered quantum wells; Brillouin zones; birefringence; confinement profile; error function; excitonic effects; interdiffusion; refractive index model; single quantum well structures;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19921356
Filename :
172985
Link To Document :
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