• DocumentCode
    806756
  • Title

    100 W 671 nm visible laser diode array

  • Author

    Serreze, H.B. ; Harding, C.M.

  • Author_Institution
    McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA
  • Volume
    28
  • Issue
    23
  • fYear
    1992
  • Firstpage
    2115
  • Lastpage
    2116
  • Abstract
    A GaInP/AlGaInP, strained-layer, single quantum well, monolithic laser diode array is described which has achieved a room temperature quasi-CW (100 mu s, 10 Hz) output of over 100 W at 671 nm.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor laser arrays; 100 W; 671 nm; GaInP-AlGaInP; quasi CW output power; strained layer single quantum well monolithic laser diode array; visible laser diode array;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921357
  • Filename
    172986
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=806756