Title :
Novel on-chip fully monolithic integration of GaAs devices with completely fabricated Si CMOS circuits
Author :
Ma, Kai ; Chen, Ray ; Miller, David A B ; Harris, James S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
We monolithically integrated polycrystalline GaAs metal-semiconductor-metal (MSM) photoconductive switches with a completely fabricated Si-CMOS amplifier and obtained a properly functional optical receiver, without altering the Si circuit performance. To our knowledge, this is the first time a fully monolithic on-chip integration has been achieved.
Keywords :
CMOS integrated circuits; III-V semiconductors; elemental semiconductors; gallium arsenide; integrated optics; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photoconducting switches; silicon; GaAs; GaAs devices; Si; Si CMOS circuits; Si-CMOS amplifier; fully monolithic integration; metal-semiconductor-metal switches; on-chip integration; optical receiver; photoconductive switches; polycrystalline GaAs switches; Circuit optimization; Gallium arsenide; Monolithic integrated circuits; Optical amplifiers; Optical receivers; Optical switches; Photoconducting devices; Photoconducting materials; Semiconductor optical amplifiers; Switching circuits; Analog-to-digital converter (ADC); GaAs on Si; integrated optoelectronic CMOS circuit; metal-semiconductor-metal (MSM) switch; molecular beam epitaxy (MBE); monolithic integration; on-chip integration; optical receiver; photoconductive switch; polycrystalline GaAs (poly-GaAs);
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2005.860991
