Novel on-chip fully monolithic integration of GaAs devices with completely fabricated Si CMOS circuits

Author

Ma, Kai ; Chen, Ray ; Miller, David A B ; Harris, James S., Jr.

Author_Institution

Solid State & Photonics Lab., Stanford Univ., CA, USA

Volume

11

Issue

6

fYear

2005

Firstpage

1278

Lastpage

1283

Abstract

We monolithically integrated polycrystalline GaAs metal-semiconductor-metal (MSM) photoconductive switches with a completely fabricated Si-CMOS amplifier and obtained a properly functional optical receiver, without altering the Si circuit performance. To our knowledge, this is the first time a fully monolithic on-chip integration has been achieved.

Keywords

CMOS integrated circuits; III-V semiconductors; elemental semiconductors; gallium arsenide; integrated optics; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photoconducting switches; silicon; GaAs; GaAs devices; Si; Si CMOS circuits; Si-CMOS amplifier; fully monolithic integration; metal-semiconductor-metal switches; on-chip integration; optical receiver; photoconductive switches; polycrystalline GaAs switches; Circuit optimization; Gallium arsenide; Monolithic integrated circuits; Optical amplifiers; Optical receivers; Optical switches; Photoconducting devices; Photoconducting materials; Semiconductor optical amplifiers; Switching circuits; Analog-to-digital converter (ADC); GaAs on Si; integrated optoelectronic CMOS circuit; metal-semiconductor-metal (MSM) switch; molecular beam epitaxy (MBE); monolithic integration; on-chip integration; optical receiver; photoconductive switch; polycrystalline GaAs (poly-GaAs);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2005.860991

Filename

1583643