Title :
Efficient high-speed direct modulation in p-doped In0.35Ga0.65As/GaAs multiquantum well lasers
Author :
Weisser, Stefan ; Ralston, J.D. ; Larkins, E.C. ; Esquivias, Ignacio ; Tasker, P.J. ; Fleissner, J. ; Rosenzweig, J.
Author_Institution :
Fraunhofer Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
The authors demonstrate p-type modulation-doped strained-layer In0.35Ga0.65As/GaAs multiquantum well lasers which achieve a 3 dB direct modulation bandwidth of 20 GHz at a low CW drive current of 50 mA in a simple 3*200 mu m2 mesa structure. For the same device dimensions, a modulation bandwidth of 30 GHz was measured at a CW drive current of 114 mA. This is the highest direct modulation bandwidth reported for any semiconductor laser.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; optical modulation; semiconductor lasers; 114 mA; 20 GHz; 3 dB direct modulation bandwidth; 30 GHz; 50 mA; CW drive current; In 0.35Ga 0.65As-GaAs multiquantum well lasers; high-speed direct modulation; mesa structure; p-type modulation doped strained layer MQW lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921374
