High-speed InGaAsP/InGaAsP MQW electroabsorption modulator with high optical power handling capacity

The high-speed and static characteristics at high optical intensity of an InGaAsP/InGaAsP MQW electroabsorption modulator at 1.53 mu m are investigated. When considering wavelength and device length, and allowing a bandwidth in excess of 20 GHz and 2 V drive voltage, the authors found that the static and large-signal dynamic performances do not change with 5.6 dBm of coupled optical power. This is the highest optical power level that an electroabsorption modulator (bulk or MQW) has ever been reported to handle without degradation.