High reliability low-threshold InGaAsP ridge waveguide lasers emitting at 1.3 μm

Author

Rashid, Aziz M. ; Murison, R. ; Haynes, James ; Henshall, Gordon David ; Stockton, Thomas E. ; Janssen, Adrian

Author_Institution

STC Defence Syst., Paignton, UK

Volume

6

Issue

1

fYear

1988

fDate

1/1/1988 12:00:00 AM

Firstpage

25

Lastpage

29

Abstract

The fabrication, performance, and reliability of InP/InGaAsP ridge waveguide lasers emitting at 1.3 μm is described. The structure requires only one stage of planar wafer growth and simple fabrication steps and is therefore an inherently low-cost product. Threshold currents are typically 25-30 mA, and the external quantum efficiency is 20-25% per facet. Output power in the fundamental mode is maintained to above 10 mW, while total power in excess of 100-mW CW at 20° has been obtained. The life test data have been fitted to a power-law drift model to predict long-term behavior and is consistent with total lifetimes in excess of 25 years. The device is eminently suited for applications in high-reliability high-capacity fiber-optic communications systems

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical waveguides; semiconductor junction lasers; 1.3 micron; 10 mW; 100 mW; 20 degC; 25 to 30 mA; InP-InGaAsP ridge waveguide lasers; fabrication; fundamental mode; high-reliability high-capacity fiber-optic communications systems; life test data; performance; planar wafer growth; power-law drift model; quantum efficiency; reliability; semiconductors; Indium phosphide; Laser modes; Life testing; Optical device fabrication; Optical fiber communication; Power generation; Power system modeling; Predictive models; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.3958

Filename

3958