Title :
On the choice of optimum FET size in wide-band transimpedance amplifiers
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
1/1/1988 12:00:00 AM
Abstract :
The main figure of merit for transimpedance amplifiers used in amplifying photocurrents in fiber-optics systems is the optical sensitivity. This sensitivity is determined by the equivalent input noise current of the amplifier. To obtain the best noise performance, most transimpedance amplifiers with FET input stages are designed using a result that prescribes making the capacitance of the input FET equal to the photodiode capacitance. It is shown that this is not necessarily the most favorable practice when using FETs in scaled submicrometer technologies. For example, it may compromise the stability of the amplifier
Keywords :
amplifiers; electron device noise; field effect transistors; optical fibres; capacitance; equivalent input noise current; fiber-optics systems; figure of merit; optical sensitivity; optimum FET size; photocurrents; photodiode capacitance; scaled submicrometer technologies; stability; wide-band transimpedance amplifiers; Broadband amplifiers; Capacitance; FETs; Optical amplifiers; Optical fiber amplifiers; Optical fiber sensors; Optical noise; Photoconductivity; Semiconductor optical amplifiers; Wideband;
Journal_Title :
Lightwave Technology, Journal of
