DocumentCode
807279
Title
Semiconductor Device Degradation by High Amplitude Current Pulses
Author
Brown, W.D.
Author_Institution
Sandia Laboratories Albuquerque, New Mexico 87115
Volume
19
Issue
6
fYear
1972
Firstpage
68
Lastpage
75
Abstract
This paper presents the results of a lengthy and comprehensive investigation of semiconductor device degradation from nanosecond current pulses. Topics discussed include (1) previously published literature on pulse degradation and second breakdown, (2) experimental results obtained in several studies, (3) pulse damage recovery using several annealing techniques, (4) a model of the pulse damage, (5) possible methods of hardening against pulse degradation, and (6) a preventive measure that can be taken to eliminate pulse damage.
Keywords
Degradation; Electric breakdown; Frequency; Impedance; Leakage current; Nanoscale devices; Pulse circuits; Pulse measurements; Semiconductor devices; Space vector pulse width modulation;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1972.4326810
Filename
4326810
Link To Document