Semiconductor Device Degradation by High Amplitude Current Pulses

This paper presents the results of a lengthy and comprehensive investigation of semiconductor device degradation from nanosecond current pulses. Topics discussed include (1) previously published literature on pulse degradation and second breakdown, (2) experimental results obtained in several studies, (3) pulse damage recovery using several annealing techniques, (4) a model of the pulse damage, (5) possible methods of hardening against pulse degradation, and (6) a preventive measure that can be taken to eliminate pulse damage.