Title :
High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality of M/sup 2/=1.9 at P=4.4 W
Author :
Dittmar, F. ; Sumpf, B. ; Fricke, J. ; Erbert, G. ; Tränkle, G.
Author_Institution :
Optoelectronics Dept., Ferdinand-Braun-Inst., Berlin
Abstract :
High-power 808-nm tapered diode lasers mounted as single emitters with very good brightness were manufactured and analyzed. The beam propagation ratio M2 is 1.9 at 4.4 W; a very low beam propagation ratio M2 of 1.3 is achieved at 3.9 W. At 808 nm, the high brightness of 460 MWmiddotcm-2 sr-1 never reported before is a step forward toward new applications of tapered diode lasers
Keywords :
brightness; laser beams; semiconductor device measurement; semiconductor lasers; 3.9 W; 4.4 W; 808 nm; beam propagation ratio; brightness; nearly diffraction-limited beam; single emitters; tapered diode lasers; Brightness; Diffraction; Diode lasers; Laser beams; Power lasers; Pump lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; Waveguide lasers; 808 nm; beam quality; high brightness; high power; semiconductor lasers; tapered lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.870152
