Title :
Lumped Model Analysis of Semiconductor Devices Using the NET-2 Circuit/System Analysis Program
Author :
Raymond, J.P. ; Krebs, M.G.
Author_Institution :
Northrop Corporate Laboratories Hawthorne, California 90250
Abstract :
Capability of the NET-2 circuit/system computer program in semiconductor device analysis is presented. Semiconductor devices are described in terms of lumped model networks of user-selected complexity. The basic capability is illustrated through the calculation of electrical and radiation-induced transient response of diodes and transistors. Capability of NET-2 is demonstrated by the analysis of a junction-isolated TTL gate. The TTL gate model was derived by the interconnection of detailed lumped models of each of the transistor elements. Calculated electrical switching response and photoresponse accurately simulated observed results.
Keywords :
Circuit analysis; Circuit analysis computing; Integrated circuit interconnections; Ionizing radiation; Laboratories; P-n junctions; Radiation effects; Radiative recombination; Semiconductor devices; Semiconductor diodes;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1972.4326816
