• DocumentCode
    807376
  • Title

    Drastic morphological improvements in GaAs growth on undercut mesa stripes by MBE

  • Author

    Takamori, Toshi ; Watanabe, K. ; Kamijoh, T.

  • Author_Institution
    OKI Electric Industry Co Ltd., Tokyo, Japan
  • Volume
    28
  • Issue
    24
  • fYear
    1992
  • Firstpage
    2207
  • Lastpage
    2209
  • Abstract
    The growth of GaAs on undercut mesa-striped substate by MBE is studied. Drastic improvements in surface morphology are achieved by off-aligning the stripe direction from the
  • Keywords
    III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; scanning electron microscope examination of materials; semiconductor growth; surface structure; GaAs growth; MBE; SEM; stripe direction; surface morphology; undercut mesa-striped substate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921418
  • Filename
    173047
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=807376