DocumentCode :
807376
Title :
Drastic morphological improvements in GaAs growth on undercut mesa stripes by MBE
Author :
Takamori, Toshi ; Watanabe, K. ; Kamijoh, T.
Author_Institution :
OKI Electric Industry Co Ltd., Tokyo, Japan
Volume :
28
Issue :
24
fYear :
1992
Firstpage :
2207
Lastpage :
2209
Abstract :
The growth of GaAs on undercut mesa-striped substate by MBE is studied. Drastic improvements in surface morphology are achieved by off-aligning the stripe direction from the
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; scanning electron microscope examination of materials; semiconductor growth; surface structure; GaAs growth; MBE; SEM; stripe direction; surface morphology; undercut mesa-striped substate;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19921418
Filename :
173047
Link To Document :
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