Title :
Drastic morphological improvements in GaAs growth on undercut mesa stripes by MBE
Author :
Takamori, Toshi ; Watanabe, K. ; Kamijoh, T.
Author_Institution :
OKI Electric Industry Co Ltd., Tokyo, Japan
Abstract :
The growth of GaAs on undercut mesa-striped substate by MBE is studied. Drastic improvements in surface morphology are achieved by off-aligning the stripe direction from the
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; scanning electron microscope examination of materials; semiconductor growth; surface structure; GaAs growth; MBE; SEM; stripe direction; surface morphology; undercut mesa-striped substate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921418
