Title :
Design and fabrication of 1.3-μm vertical-cavity surface-emitting lasers using dielectric reflectors
Author :
Nguyen, T. ; Shen, C. ; Wu, X. ; Pinnington, T. ; Krogen, J. ; Witzigmann, B. ; Tsai, Chia-Yin ; Cote, L. ; Geva, M. ; Huynh, D. ; Konkar, A. ; Chen, P.C.
Author_Institution :
Agere Syst., Alhambra, CA, USA
Abstract :
A novel vertical-cavity surface-emitting laser structure has been fabricated with low loss and high reflectivity a-Al2O3/a-Si distributed Bragg reflectors. The active region consists of AlGaInAs multiple quantum wells and a tunnel junction and has been grown by a single-step metal-organic chemical vapor deposition. Laser emission at 1.3 μm was achieved under continuous-wave operation at room temperature.
Keywords :
III-V semiconductors; MOCVD; alumina; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optics; laser mirrors; optical losses; quantum well lasers; silicon; surface emitting lasers; 1.3 micron; 1.3-/spl mu/m vertical-cavity surface-emitting lasers; 2 mA; 3 V; Al/sub 2/O/sub 3/-Si; AlGaInAs; AlGaInAs multiple quantum wells; InP; InP substrate; VCSELs; a-Al/sub 2/O/sub 3//a-Si distributed Bragg reflectors; active region; continuous-wave operation; dielectric reflectors; high reflectivity; laser emission; low loss; optical loss; room temperature; single-step metal-organic chemical vapor deposition; threshold current; tunnel junction; turn-on voltage; Chemical lasers; Chemical vapor deposition; Dielectrics; Distributed Bragg reflectors; Optical design; Optical device fabrication; Quantum well lasers; Reflectivity; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.818672
