Design and fabrication of 1.3-μm vertical-cavity surface-emitting lasers using dielectric reflectors

Author

Nguyen, T. ; Shen, C. ; Wu, X. ; Pinnington, T. ; Krogen, J. ; Witzigmann, B. ; Tsai, Chia-Yin ; Cote, L. ; Geva, M. ; Huynh, D. ; Konkar, A. ; Chen, P.C.

Author_Institution

Agere Syst., Alhambra, CA, USA

Volume

15

Issue

11

fYear

2003

Firstpage

1498

Lastpage

1500

Abstract

A novel vertical-cavity surface-emitting laser structure has been fabricated with low loss and high reflectivity a-Al₂O₃/a-Si distributed Bragg reflectors. The active region consists of AlGaInAs multiple quantum wells and a tunnel junction and has been grown by a single-step metal-organic chemical vapor deposition. Laser emission at 1.3 μm was achieved under continuous-wave operation at room temperature.

Keywords

III-V semiconductors; MOCVD; alumina; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optics; laser mirrors; optical losses; quantum well lasers; silicon; surface emitting lasers; 1.3 micron; 1.3-/spl mu/m vertical-cavity surface-emitting lasers; 2 mA; 3 V; Al/sub 2/O/sub 3/-Si; AlGaInAs; AlGaInAs multiple quantum wells; InP; InP substrate; VCSELs; a-Al/sub 2/O/sub 3//a-Si distributed Bragg reflectors; active region; continuous-wave operation; dielectric reflectors; high reflectivity; laser emission; low loss; optical loss; room temperature; single-step metal-organic chemical vapor deposition; threshold current; tunnel junction; turn-on voltage; Chemical lasers; Chemical vapor deposition; Dielectrics; Distributed Bragg reflectors; Optical design; Optical device fabrication; Quantum well lasers; Reflectivity; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.818672

Filename

1237567