Title :
NBTI/PBTI-Aware WWL Voltage Control for Half-Selected Cell Stability Improvement
Author :
Chuan Zhao Lee ; Kam Chew Leong ; Zhi Hui Kong ; Kim, Tony Tae-Hyoung
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
This brief presents a negative bias temperature instability (BTI)/positive BTI-aware write-wordline (WWL) voltage control technique for improving degraded cell stability of half-selected cells without extra power consumption. After BTI aging, the proposed lowering WWL voltage recovers the degraded cell stability without scarifying the write margin. Finally, we also present a sample circuit implementation of the proposed WWL voltage control scheme.
Keywords :
negative bias temperature instability; signal processing equipment; voltage control; BTI aging; NBTI-PBTI-aware WWL voltage control; cell stability degradation; half-selected cell stability improvement; negative bias temperature instability; positive BTI-aware write-wordline voltage control technique; power consumption; sample circuit; write margin; Circuit stability; Degradation; SRAM cells; Stability analysis; Stress; Voltage control; Half-selected static noise margin (HS-SNM); negative bias temperature instability (NBTI); positive bias temperature instability (PBTI);
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2013.2273731
