• DocumentCode
    807548
  • Title

    Driving force for the formation of Sn whiskers: compressive stress-pathways for its generation and remedies for its elimination and minimization

  • Author

    Xu, Chen ; Zhang, Yun ; Fan, Chonglun ; Abys, Joseph A.

  • Author_Institution
    Cookson Electron. PWB Mater. & Chem., Jersey City, NJ, USA
  • Volume
    28
  • Issue
    1
  • fYear
    2005
  • Firstpage
    31
  • Lastpage
    35
  • Abstract
    Compressive stress is widely accepted as the driving force for tin whisker formation. There are several pathways for compressive stress buildup in Sn coatings, which include the following: residual stress generated during plating; stress formation due to interfacial reactions between tin and copper substrate; mechanical stress; and thermal mechanical stress due to coefficient of thermal expansion (CTE) mismatch between the tin layer and substrate during thermal cycling. In order to prevent or reduce whisker growth in tin deposits, compressive stress has to be eliminated or minimized. This paper discusses the pathways for compressive stress formation and various remedies for its elimination and minimization. Particularly, a novel approach for dealing with thermal mechanical stress due to CTE mismatch is discussed.
  • Keywords
    coatings; compressive strength; electroplating; thermal expansion; tin; whiskers (crystal); CTE mismatch; coefficient of thermal expansion; compressive stress; copper substrate; interfacial reactions; residual stress; stress formation; thermal cycling; thermal mechanical stress; tin whisker formation; whisker growth; Coatings; Compressive stress; Minimization; Residual stresses; Tensile stress; Thermal expansion; Thermal force; Thermal stresses; Thermodynamics; Tin; Compressive stresses; thin tin; tin whisker;
  • fLanguage
    English
  • Journal_Title
    Electronics Packaging Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1521-334X
  • Type

    jour

  • DOI
    10.1109/TEPM.2005.846461
  • Filename
    1430807