• DocumentCode
    807566
  • Title

    Inversion-channel Si/SiGe heterojunction field-effect transistor

  • Author

    Kovacic, S.J. ; Simmons, Jay G. ; Noel, Jean-Philippe ; Houghton, D.C. ; Buchanan, M.

  • Author_Institution
    McMaster Univ., Hamilton, Ont., Canada
  • Volume
    28
  • Issue
    24
  • fYear
    1992
  • Firstpage
    2234
  • Lastpage
    2235
  • Abstract
    The p-channel operation of a selfaligned heterojunction field-effect transistor (HFET) based on an Si/Si0.75Ge0.25 heterostructure is demonstrated. Extrinsic transconductance gm greater than 8 mS/mm for a device with 1 mu m gate length was measured at 300 K. The high frequency 3 dB point has been measured to be 1.8 GHz.
  • Keywords
    Ge-Si alloys; elemental semiconductors; field effect transistors; silicon; 1 micron; 1.8 GHz; 8 mS; Si-Si 0.75Ge 0.25 heteorstructure; extrinsic transconductance; gate length; high frequency 3 dB point; inversion channel HFET; p-channel operation; selfaligned heterojunction field-effect transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921435
  • Filename
    173064
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=807566