DocumentCode :
807566
Title :
Inversion-channel Si/SiGe heterojunction field-effect transistor
Author :
Kovacic, S.J. ; Simmons, Jay G. ; Noel, Jean-Philippe ; Houghton, D.C. ; Buchanan, M.
Author_Institution :
McMaster Univ., Hamilton, Ont., Canada
Volume :
28
Issue :
24
fYear :
1992
Firstpage :
2234
Lastpage :
2235
Abstract :
The p-channel operation of a selfaligned heterojunction field-effect transistor (HFET) based on an Si/Si0.75Ge0.25 heterostructure is demonstrated. Extrinsic transconductance gm greater than 8 mS/mm for a device with 1 mu m gate length was measured at 300 K. The high frequency 3 dB point has been measured to be 1.8 GHz.
Keywords :
Ge-Si alloys; elemental semiconductors; field effect transistors; silicon; 1 micron; 1.8 GHz; 8 mS; Si-Si 0.75Ge 0.25 heteorstructure; extrinsic transconductance; gate length; high frequency 3 dB point; inversion channel HFET; p-channel operation; selfaligned heterojunction field-effect transistor;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19921435
Filename :
173064
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=807566
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