• DocumentCode
    807583
  • Title

    Nonalloyed ohmic contacts for p+-type in GaAs base layer in HBTs

  • Author

    Ressel, P. ; Vogel, Klaus ; Fritzsche, Daniel ; Mause, K.

  • Author_Institution
    Ferdinand Braun Inst. fur Hochstfrequenztech. im Forschungsverbund Berlin e.V, Germany
  • Volume
    28
  • Issue
    24
  • fYear
    1992
  • Firstpage
    2237
  • Lastpage
    2238
  • Abstract
    Two new metallisation systems, Pd/Pt and Cr/Au, for nonalloyed ohmic contacts on p+-InGaAs have been compared with the Ti/Pt contact. The observed strong dependence of the contact resistivity on the metal is related to its work function. The lowest resistivities are achieved with Pd/Pt, e.g. 1.2*10-6 Omega cm2 for p=1.7*19 cm-3.
  • Keywords
    III-V semiconductors; chromium; contact resistance; gallium arsenide; gold; heterojunction bipolar transistors; indium compounds; metallisation; ohmic contacts; palladium; platinum; semiconductor-metal boundaries; Cr-Au-InGaAs; HBT; Pd-Pt-InGaAs; Ti-Pt-InGaAs; contact resistivity; metallisation systems; nonalloyed ohmic contacts; p +-type base layer; work function;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921437
  • Filename
    173066
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=807583