DocumentCode :
807583
Title :
Nonalloyed ohmic contacts for p+-type in GaAs base layer in HBTs
Author :
Ressel, P. ; Vogel, Klaus ; Fritzsche, Daniel ; Mause, K.
Author_Institution :
Ferdinand Braun Inst. fur Hochstfrequenztech. im Forschungsverbund Berlin e.V, Germany
Volume :
28
Issue :
24
fYear :
1992
Firstpage :
2237
Lastpage :
2238
Abstract :
Two new metallisation systems, Pd/Pt and Cr/Au, for nonalloyed ohmic contacts on p+-InGaAs have been compared with the Ti/Pt contact. The observed strong dependence of the contact resistivity on the metal is related to its work function. The lowest resistivities are achieved with Pd/Pt, e.g. 1.2*10-6 Omega cm2 for p=1.7*19 cm-3.
Keywords :
III-V semiconductors; chromium; contact resistance; gallium arsenide; gold; heterojunction bipolar transistors; indium compounds; metallisation; ohmic contacts; palladium; platinum; semiconductor-metal boundaries; Cr-Au-InGaAs; HBT; Pd-Pt-InGaAs; Ti-Pt-InGaAs; contact resistivity; metallisation systems; nonalloyed ohmic contacts; p +-type base layer; work function;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19921437
Filename :
173066
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=807583
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