Title :
Low Energy Ion Bombardment Effects in SiO2
Author :
McCaughan, Daniel V. ; Murphy, V.T.
Author_Institution :
Bell Telephone Laboratories, Incorporated Murray Hill, New Jersey 07974
Abstract :
Evidence has been presented for the presence of mobile ions in ion bombarded SiO2, these ions being possibly protons or sodium ions. A model invoking neutralization of the incident ion beam at the surface, followed by impurity ion transport to the interface under the influence of the field building up across the SiO2 film during bombardment has been constructed to explain the experimental data.
Keywords :
Annealing; Capacitance-voltage characteristics; Degradation; Frequency measurement; Insulation; Interface states; Metallization; Nitrogen; Plasma temperature; Semiconductor films;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1972.4326841
