DocumentCode
807610
Title
Spatial control of quantum well intermixing in GaAs/AlGaAs using a one-step process
Author
Beavuvis, J. ; Marsh, John H.
Volume
28
Issue
24
fYear
1992
Firstpage
2240
Lastpage
2241
Abstract
Dielectric cap disordering with strontium fluoride masking is used to provide a range of bandgap values in GaAs/AlGaAs quantum wells using a single annealing step. Partial area coverage by a strontium fluoride mask under a silica cap determines the amount of quantum well intermixing.
Keywords
III-V semiconductors; aluminium compounds; annealing; chemical interdiffusion; energy gap; gallium arsenide; semiconductor quantum wells; annealing; bandgap values; dieletric cap disordering; intermixing spatial control; one-step process; quantum well intermixing; silica cap;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921440
Filename
173069
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