Title :
Low-energy erbium implanted Si3N4/SiO2/Si waveguides
Author :
Lumholt, O. ; Bernas, H. ; Chabli, A. ; Cahumont, J. ; Grand, G. ; Valette, S.
Author_Institution :
Tech. Univ. of Denmark, Lyngby, Denmark
Abstract :
Photoluminescence spectroscopy studies of low energy erbium and erbium/oxygen implanted silicon-nitride waveguides are compared. Emission spectra show peaks at 1533 and 1548 nm. The optimum annealing temperature is determined to be 1175 degrees C yielding lifetimes up to 7 ms and a several decade intensity increase. Er implantation yields more than 40% longer lifetime and higher intensity than Er/O.
Keywords :
elemental semiconductors; erbium; infrared spectra of inorganic solids; ion implantation; optical waveguides; photoluminescence; silicon; silicon compounds; 1117 degC; 1533 nm; 1548 nm; Si 3N 4:Er, O-SiO 2-Si; Si 3N 4:Er-SiO 2-Si; emission spectra; ion implanted optical waveguides; low-energy Er implantation; optimum annealing temperature; photoluminescence spectra;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921441
