• DocumentCode
    807690
  • Title

    Small area InGaP emitter/carbon doped GaAs base HBTs grown by MOMBE

  • Author

    Ren, Fengyuan ; Abernathy, C.R. ; Pearton, S.J. ; Lothian, J.R. ; Chu, S.N.G. ; Wisk, Patrick W. ; Fullowan, T.R. ; Tseng, B. ; Chen, Y.K.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    28
  • Issue
    24
  • fYear
    1992
  • Firstpage
    2250
  • Lastpage
    2252
  • Abstract
    High performance selfaligned InGaP/GaAs HBTs are reported. SIMS and TEM analysis indicate the presence of clean and abrupt InGaP/GaAs interfaces which are reflected in excellent DC performance. Using a base layer with a sheet resistance of 135 Omega / Square Operator , a DC current gain of 25 was obtained for 2*5 mu m2 devices. Both cutoff frequency ft and maximum frequency of oscillation fmax are measured above 70 GHz. These are the highest values yet reported for HBTs containing InGaP.
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor growth; 70 GHz; C doped base; DC performance; InGaP-GaAs:C; MOMBE; SIMS; TEM analysis; selfaligned HBT; small area device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921447
  • Filename
    173076
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=807690