• DocumentCode
    807733
  • Title

    Far field broadening due to near field phase distortion at contact layers in AlGaAs/GaAs GRIN-MQW lasers

  • Author

    van der Poel, C.J. ; Ambrosius, Huub ; Acket, G.A. ; Kaufmann, L.M.F. ; van de Roer, Th.G.

  • Volume
    28
  • Issue
    24
  • fYear
    1992
  • Firstpage
    2255
  • Lastpage
    2256
  • Abstract
    Experimentally and numerically it is shown that near field phase distortion due to optical losses in the contact regions causes a strong dependence of far field widths on cladding layer thickness for typical MQW lasers.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; optical losses; semiconductor lasers; spectral line breadth; AlGaAs-GaAs; GRIN-MQW lasers; cladding layer thickness; contact layers; near field phase distortion; optical losses; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921450
  • Filename
    173079
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=807733