Title :
InGaAs/InP waveguide photodetector with high saturation intensity
Author :
Williams, A.R. ; Kellner, A.L. ; Jiang, X.S. ; Yu, Paul K. L.
Author_Institution :
California Univ., San Diego, La Jolla, CA, USA
Abstract :
An InGaAs/InP rib-loaded waveguide PIN photodetector integrated with a microwave coplanar waveguide transmission line on a semi-insulating InP substrate is demonstrated. The detector has a 3 dB frequency response in excess of 20 GHs. The DC responsivity of the waveguide photodetector remains constant at 0.21 A/W over a range of incident optical powers from 400 mu W to 20 mW.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; optical waveguides; p-i-n photodiodes; photodetectors; 20 GHz; 400 muW to 20 mW; DC responsivity; InGaAs-InP; InP substrate; PIN photodetector; high saturation intensity; microwave coplanar waveguide; rib-loaded waveguide; semiinsulating substrate; transmission line; waveguide photodetector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921452
