• DocumentCode
    807817
  • Title

    Neutron Damage in GaAs Laser Diodes: At and above Laser Threshold

  • Author

    Barnes, C.E.

  • Author_Institution
    Sandia Laboratories Albuquerque, New Mexico 87115
  • Volume
    19
  • Issue
    6
  • fYear
    1972
  • Firstpage
    382
  • Lastpage
    385
  • Abstract
    The effects of fast neutron damage on GaAs laser diodes have been examined with the following results: (1) Infrared photomicrographs of laser output for diodes operating above threshold at 300 K reveal that neutron irradiation does not have a significant effect on the near-field spatial distribution. (2) Neutron irradiation of a group of laser diodes of different cavity lengths demonstrates that the damage-induced increase in threshold current at 300 K is due primarily to a decrease in gain factor. The rate of decrease of the gain factor with neutron fluence agrees with that predicted by a previously determined damage constant. (3) Preliminary measurements of total light output as a function of diode current at 300 K and 76 K show that the lasers are much less sensitive to neutron damage at currents significantly above threshold. In fact, for some diodes the light output at 76 K increases at a given current with neutron irradiation for fluences as high as 3 × 1014 n/cm2.
  • Keywords
    Current measurement; Diode lasers; Electrons; Gain measurement; Gallium arsenide; Laboratories; Laser modes; Neutrons; Optical pulse generation; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1972.4326862
  • Filename
    4326862