High CW output power and “wallplug” efficiency Al-free InGaAs/InGaAsP/InGaP double quantum well diode lasers

Author

Mawst, L.J. ; Bhattacharya, A. ; Nesnidal, M. ; Lopez, J. ; Botez, D. ; Morris, J.A. ; Zory, P.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

Volume

31

Issue

14

fYear

1995

fDate

7/6/1995 12:00:00 AM

Firstpage

1153

Lastpage

1154

Abstract

2W CW output power has been obtained (driver-limited) from aluminum-free, strained-layer double quantum well (DQW) InGaAs/InGaAsP/InGaP uncoated `broad area´ diode lasers (λ=0.96 μm) grown by low pressure MOCVD. Power conversion (“wallplug”) efficiencies of 43.3% are achieved at 1.6 W CW output power. The combination of high bandgap (1.62 eV) InGaAsP confinement layers and the DQW structure provides relatively weak temperature dependence of both the threshold current and the external differential quantum efficiency

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 0.96 micron; 2 W; 43.3 percent; CW output power; InGaAs-InGaAsP-InGaP; aluminum-free strained-layer double quantum well; broad area diode lasers; driver-limited power; external differential quantum efficiency; low pressure MOCVD; power conversion efficiencies; temperature dependence; threshold current; wallplug efficiency;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950812

Filename

398590