DocumentCode
808072
Title
High energy CW Q-switched operation of multicontact semiconductor laser
Author
Gavrilovic, P. ; Stelmakh, N. ; Zarrabi, J.H. ; Beyea, D.M.
Author_Institution
Polaroid Corp., Cambridge, MA, USA
Volume
31
Issue
14
fYear
1995
fDate
7/6/1995 12:00:00 AM
Firstpage
1154
Lastpage
1155
Abstract
Continuous-wave passive Q-switched operation of multiple-contact AlGaAs laser diodes is described. Stable pulses having an energy of 300 pJ and a duration of 40 ps were obtained from 100 μm wide devices with an 800 Å thick active layer. The pulse repetition frequency was remarkably stable, having an RF linewidth of <100 kHz
Keywords
III-V semiconductors; Q-switching; aluminium compounds; gallium arsenide; semiconductor lasers; 300 pJ; 40 ps; AlGaAs; RF linewidth; continuous-wave passive Q-switched operation; high energy semiconductor laser; multiple-contact AlGaAs laser diodes; pulse repetition frequency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950790
Filename
398591
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