Title :
Low dark current, long wavelength metal-semiconductor-metal photodetectors
Author :
Wohlmuth, W.A. ; Fay, P. ; Caneau, C. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
2/1/1996 12:00:00 AM
Abstract :
Dark current densities of 0.13 and 0.44 pA/μm2 at biases of 5 and 10 V, respectively, have been obtained for InAlAs/InGaAs metal-semiconductor-metal photodetectors with a 2 μm electrode width and spacing, by placing the electrode tips and contact pads on top of an insulating layer of silicon nitride. This is the lowest known dark current density reported for InAlAs/InGaAs metal-semiconductor-metal photodetectors to date
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; InAlAs-InGaAs; Si3N4; dark current densities; insulating layer; long wavelength metal-semiconductor-metal photodetectors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960178
