DocumentCode :
808205
Title :
Considerations for high data rate recording with thin-film heads
Author :
Wood, Roger ; Williams, Mason ; Hong, Jonggi
Author_Institution :
IBM Gen. Products Div., San Jose, CA, USA
Volume :
26
Issue :
6
fYear :
1990
fDate :
11/1/1990 12:00:00 AM
Firstpage :
2954
Lastpage :
2959
Abstract :
The significance of head inductance and eddy currents in limiting field rise times is discussed. Poor rise times can cause severe distortion and loss of performance at high data rates. A simple reluctance model is developed to explore the relationship between the geometry of a head and its inductance. The model is extended to include the effects of eddy currents, and to allow the frequency-dependent efficiency (hence the field rise time) to be calculated. Based on this rise time, a geometric model is used to calculate the positions of the recorded transitions and the resulting transition-shift distortion. Experimental results at transition separations down to 6 ns reveal a strong write current dependency which is not seen in the model. This dependence is, however, clearly seen in a simple domain wall model which implicitly includes magnetic saturation. Transition shift distortion can be mitigated by the use of precompensation. It is found that it is possible to successfully recover data at 180 Mbit/s using a conventional thin-film head
Keywords :
eddy currents; inductance; magnetic heads; magnetic recording; magnetic thin film devices; domain wall model; eddy currents; field rise times; frequency-dependent efficiency; geometry; head inductance; high data rate recording; magnetic saturation; precompensation; reluctance model; thin-film heads; transition-shift distortion; write current dependency; Eddy currents; Frequency; Geometry; Inductance; Magnetic domain walls; Magnetic domains; Magnetic heads; Performance loss; Solid modeling; Transistors;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.102872
Filename :
102872
Link To Document :
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