• DocumentCode
    808228
  • Title

    Spectral control in multisection AlGaAs SQW superluminescent diodes at 800 nm

  • Author

    Semenov, A.T. ; Shidlovski, V.R. ; Jackson, D.A. ; Willsch, R. ; Ecke, W.

  • Author_Institution
    Superlum Ltd., Moscow, Russia
  • Volume
    32
  • Issue
    3
  • fYear
    1996
  • fDate
    2/1/1996 12:00:00 AM
  • Firstpage
    255
  • Lastpage
    256
  • Abstract
    It is shown that multielectrode pumping allows a significant increase in the output power of quantum well SLDs in the broad spectrum operating regime. More than 60 nm spectral width at output power ranges from 2 to 23 mW was obtained by two-electrode pumping of the active region of AlGaAs SQW SLD. The possibility of controlling the form of the SQW SLD spectrum by multielectrode pumping and central wavelength switching of a 20 nm FWHM (Gaussian profile) over 40 nm is shown. The coherence length of the SLDs estimated using the Mandel approach is 7 mm at 2 mW output, increasing to 11 mm at 23 mW
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium arsenide; semiconductor quantum wells; spectral line breadth; superluminescent diodes; 2 to 23 mW; 7 to 11 mm; 800 nm; AlGaAs; Gaussian profile; broad spectrum operating regime; central wavelength switching; multielectrode pumping; multisection SQW superluminescent diodes; single quantum well; spectral control; two-electrode pumping;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960137
  • Filename
    490836