Title :
New planarisation process for low current, high-speed InP/InGaAs heterojunction bipolar transistors
Author :
Willén, B. ; Mokhtari, M. ; Westergren, U.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
fDate :
2/1/1996 12:00:00 AM
Abstract :
Low current, high-speed InP/InGaAs heterojunction bipolar transistors were fabricated using a silicon nitride based planarisation process. Realised devices offered cutoff frequencies of >100 GHz and a DC current gain of >50 at a collector current of only 2 mA. The best maximum frequency of oscillation was 195 GHz. It is also demonstrated that the new planarisation process offers a proper base for the fabrication of integrated circuits. These results increase the competitiveness of InP-based HBTs for high-speed, low power applications
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor technology; surface treatment; 100 GHz; 195 GHz; 2 mA; DC current gain; InP-InGaAs; Si3N4; collector current; cutoff frequency; fabrication; integrated circuits; low current high-speed heterojunction bipolar transistors; low power applications; maximum frequency of oscillation; planarisation; silicon nitride;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960154
