• DocumentCode
    808322
  • Title

    Observation of inversion layers at Ga2O3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy

  • Author

    Passlack, M. ; Hong, M. ; Mannaerts, J.P.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    32
  • Issue
    3
  • fYear
    1996
  • fDate
    2/1/1996 12:00:00 AM
  • Firstpage
    267
  • Lastpage
    269
  • Abstract
    Strong inversion has been observed at Ga2O3-GaAs interfaces fabricated using in-situ multiple-chamber molecular beam epitaxy. The oxide films were deposited on clean, atomically ordered (100) GaAs surfaces at ~600°C by electron beam evaporation using a Gd3Ga5O12 single crystal source. The formation of inversion layers in both n- and p-type GaAs has been clearly established by quasi-static capacitance-voltage measurements
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; inversion layers; molecular beam epitaxial growth; semiconductor-insulator boundaries; 600 C; Ga2O3-GaAs; Ga2O3-GaAs interfaces; Gd3Ga5O12 single crystal source; atomically ordered (100) GaAs surfaces; electron beam evaporation; in-situ multiple-chamber molecular beam epitaxy; inversion layers; n-type GaAs; oxide films; p-type GaAs; quasi-static capacitance-voltage measurements;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960125
  • Filename
    490844
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=808322