Title :
Observation of inversion layers at Ga2O3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy
Author :
Passlack, M. ; Hong, M. ; Mannaerts, J.P.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
2/1/1996 12:00:00 AM
Abstract :
Strong inversion has been observed at Ga2O3-GaAs interfaces fabricated using in-situ multiple-chamber molecular beam epitaxy. The oxide films were deposited on clean, atomically ordered (100) GaAs surfaces at ~600°C by electron beam evaporation using a Gd3Ga5O12 single crystal source. The formation of inversion layers in both n- and p-type GaAs has been clearly established by quasi-static capacitance-voltage measurements
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; inversion layers; molecular beam epitaxial growth; semiconductor-insulator boundaries; 600 C; Ga2O3-GaAs; Ga2O3-GaAs interfaces; Gd3Ga5O12 single crystal source; atomically ordered (100) GaAs surfaces; electron beam evaporation; in-situ multiple-chamber molecular beam epitaxy; inversion layers; n-type GaAs; oxide films; p-type GaAs; quasi-static capacitance-voltage measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960125
