Title :
Application of anodic oxidation for postgrowth tailoring of InGaAsP/InP asymmetric Fabry-Perot modulator reflection spectra
Author :
Timofeev, F.N. ; Seeds, A.J. ; Bayvel, P. ; Midwinter, J.E. ; Hopkinson, M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fDate :
7/6/1995 12:00:00 AM
Abstract :
Reflection spectrum tuning of InGaAsP/InP asymmetric Fabry-Perot modulators (AFPMs) using anodic oxidation followed by anodic oxide removal is reported for the first time. 30-40 nm tuning of the reflection spectra of double and single Bragg stack mirror AFPM structures with better than λ/100 accuracy has been achieved
Keywords :
Fabry-Perot resonators; III-V semiconductors; anodisation; gallium arsenide; indium compounds; integrated optics; optical modulation; reflectivity; Bragg stack mirror AFPM structures; InGaAsP-InP; InGaAsP/InP asymmetric Fabry-Perot modulator; anodic oxidation; postgrowth tailoring; reflection spectrum tuning;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950810
