DocumentCode
808346
Title
Semiconductor MOPA with monolithically integrated 5 GHz electroabsorption modulator
Author
Verdiell, J.M. ; Osinsky, J.S. ; Welch, D.F. ; Scifres, D.R.
Author_Institution
SDL, San Jose, CA, USA
Volume
31
Issue
14
fYear
1995
fDate
7/6/1995 12:00:00 AM
Firstpage
1187
Lastpage
1189
Abstract
A high-power monolithically-integrated master oscillator/ electroabsorption modulator/power amplifier semiconductor laser is demonstrated. The device emits >1 W output beam power. Extinction ratios of -15 dB are obtained with a 2.9 V reverse bias voltage on the electroabsorption modulator. The 3 dB small signal modulation bandwidth is as high as 5 GHz. High-power diffraction-limited semiconductor laser sources with high-speed modulation capability are very desirable for applications such as intersatellite space telecommunications
Keywords
electro-optical modulation; electroabsorption; high-speed optical techniques; integrated optics; power amplifiers; semiconductor lasers; 1 W; 2.9 V; 5 GHz; electroabsorption modulator; extinction ratios; high-power diffraction-limited semiconductor laser; high-speed modulation; intersatellite space telecommunications; master oscillator/power amplifier; monolithic integration; semiconductor MOPA; small signal modulation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950762
Filename
398616
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