Title :
DC operated thin film electroluminescent device
Author :
Tsakonas, C. ; Thomas, C.B.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bradford Univ., UK
fDate :
7/6/1995 12:00:00 AM
Abstract :
An improved version of a DC operated thin film electroluminescent device is proposed which relies heavily on the nature of trapping states in a p--SiZnS:Mn heterodiode. Such a junction facilitates charge leakage from the inversion region of the silicon when films of ZnS are grown by sputtering in a sulphur-reduced environment. Alternatively. high resistivity films of ZnS are created by growth in a sulphur-enriched environment. Hence, the proposed structure is reverse biased p--Si/ZnS (grown in Ar/O)/Y2O3/ZnS:Mn (grown in Ar/H2S) and has a transparent electrode. The thin film of Y203 prevents diffusion of sulphur vacancies while facilitating electron tunnelling
Keywords :
II-VI semiconductors; electrodes; electroluminescent devices; p-n heterojunctions; semiconductor growth; semiconductor thin films; sputter deposition; thin film devices; tunnelling; zinc compounds; Ar; Ar/H2S; Ar/O/Y2O3/ZnS:Mn; DC operated thin film electroluminescent device; O; Si; Y2O3; ZnS; ZnS:Mn; charge leakage; electron tunnelling; high resistivity films; inversion region; p--Si/ZnS; p--SiZnS:Mn heterodiode; reverse biased; sputtering; sulphur vacancies; sulphur-enriched environment; sulphur-reduced environment; thin film; transparent electrode; trapping states;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950767
