Title :
Erasure enhancement technique in flash EEPROM by pulsed gate-drain erasure (PGDE)
Author :
Hsu, Jen-Tai ; Shumway, S.
Author_Institution :
Nat. Semicond. Corp., West Jordan, UT, USA
fDate :
7/6/1995 12:00:00 AM
Abstract :
A novel erasure technique called pulsed gate-drain erasure (PGDE) is proposed to enhance the erasure speed of flash EEPROM cells. It is shown that by combining gate-drain erasure (GDE) and a pulsing technique. PGDE can greatly improve the erasure speed over channel erasure (CE). GDE cycling reliability is also shown to be comparable to CE
Keywords :
EPROM; reliability; cycling reliability; erasure enhancement technique; erasure speed; flash EEPROM; flash EEPROM cells; gate-drain erasure; pulsed gate-drain erasure; pulsing technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950817
