Title :
Analysis of Drain-Current Nonlinearity Using Surface-Potential-Based Model in GaAs pHEMTs
Author :
Khandelwal, Sourabh ; Fjeldly, T.A.
Author_Institution :
Dept. of Electron. & Telecommun., Norwegian Univ. of Sci. & Technol., Trondheim, Norway
Abstract :
In this paper, we present a physics-based model for accurate simulation of intermodulation distortion (IMD) in GaAs pseudomorphic HEMTs at 2 GHz. We combine the surface-potential-based drain-current model previously developed by us with the standard topology used in these devices for accurate nonlinear simulations. The proposed model is in excellent agreement with measured IMD data at multiple dc bias points varying from close-to cutoff voltage to the high-conduction region. We also analyze the impact of various model elements and physical effects on IMD behavior of the device. Furthermore, the popular Volterra series coefficients for the drain current nonlinearity are analyzed and their relative importance with respect to the overall device nonlinearity is assessed.
Keywords :
III-V semiconductors; UHF field effect transistors; Volterra series; gallium arsenide; high electron mobility transistors; intermodulation distortion; GaAs; IMD; Volterra series coefficient; close-to cutoff voltage; drain-current nonlinearity simulation analysis; frequency 2 GHz; high-conduction region; intermodulation distortion; multiple DC bias point; pHEMT; physics-based model; pseudomorphic HEMT; standard topology; surface-potential-based model; Analytical models; Data models; Degradation; Integrated circuit modeling; Logic gates; Mathematical model; PHEMTs; GaAs pseudomorphic HEMTs (pHEMTs); intermodulation distortion (IMD); nonlinear models;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2013.2275943
