• DocumentCode
    808401
  • Title

    High quality oxynitride gate dielectrics prepared by reoxidation of NH3-nitrided SiO2 in N2O ambient

  • Author

    Han, L.K. ; Kim, J. ; Yoon, G.W. ; Yan, J. ; Kwong, D.L.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • Volume
    31
  • Issue
    14
  • fYear
    1995
  • fDate
    7/6/1995 12:00:00 AM
  • Firstpage
    1196
  • Lastpage
    1198
  • Abstract
    The significant advantages of reoxidation of NH3-nitrided SiO2 using N2O, as opposed to O2 in a rapid thermal system have been demonstrated. MOS capacitors with N2O-reoxidised NH3-nitrided SiO 2 show improved charge-to-breakdown characteristics and suppressed interface state generation under both injection polarities compared to those with pure SiO2 and O2-reoxidised NH3-nitrided SiO2. Significant reduction of nitridation-induced traps by N2O reoxidation is mainly responsible for these improvements
  • Keywords
    MOS capacitors; nitridation; oxidation; rapid thermal processing; MOS capacitors; N2O; N2O ambient; NH3; NH3-nitrided SiO2; SiO2; SiON; charge-to-breakdown characteristics; injection polarities; interface state generation; oxynitride gate dielectrics; rapid thermal system; reoxidation; traps;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950806
  • Filename
    398622
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=808401