• DocumentCode
    808425
  • Title

    Silicon on insulator material technology

  • Author

    Bruel, M.

  • Author_Institution
    Dept. de Microtech., Centre d´´Etudes Nucleaires de Grenoble, France
  • Volume
    31
  • Issue
    14
  • fYear
    1995
  • fDate
    7/6/1995 12:00:00 AM
  • Firstpage
    1201
  • Lastpage
    1202
  • Abstract
    A silicon on insulator material technology based on wafer bonding is described, in which a heat treatment induces an in-depth microslicing of one of the two bonded wafers previously implanted with hydrogen. The basic phenomena, and the first physical and electrical characterisations are discussed briefly
  • Keywords
    heat treatment; ion implantation; silicon-on-insulator; wafer bonding; Si:H; electrical characterisation; heat treatment; hydrogen implantation; microslicing; silicon on insulator material technology; wafer bonding;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950805
  • Filename
    398625
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=808425