• DocumentCode
    808649
  • Title

    Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm

  • Author

    Bank, S.R. ; Wistey, M.A. ; Yuen, H.B. ; Goddard, L.L. ; Ha, W. ; Harris, J.S., Jr.

  • Author_Institution
    Solid State & Photonics Lab., Stanford Univ., CA, USA
  • Volume
    39
  • Issue
    20
  • fYear
    2003
  • Firstpage
    1445
  • Lastpage
    1446
  • Abstract
    Low-threshold room temperature continuous wave 1.49 μm GaInNAsSb lasers are presented. Room temperature threshold current density of 1.1 kA/cm2 was observed with a high external quantum efficiency of 40% and maximum output power of 30 mW from both facets.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; indium compounds; semiconductor lasers; 1.49 micron; 30 mW; 40 percent; GaInNAsSb-GaAs; GaInNAsSb/GaAs; external quantum efficiency; low-threshold continuous wave lasers; output power; room temperature lasers; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030928
  • Filename
    1238593
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=808649