A new integrated pixel detector for high energy physics

Author

Snoeys, W. ; Plummer, J. ; Parker, S. ; Kenney, C.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

39

Issue

5

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1263

Lastpage

1269

Abstract

The authors have fabricated integrated pixel devices which have the high-resistivity, signal-charge collecting volume and the readout circuitry in a single piece of silicon. The device and its circuitry are described. They present noise measurements illustrating the excellent signal to single-channel noise performance of this device of about 150 to 1 for a minimum ionizing particle, which is an order to magnitude better than silicon strip detectors currently used. A setup was made for packaged devices. Gamma irradiation measurement results obtained with this setup illustrate the high signal to noise performance, and good uniformity in sensitivity over the different pixels

Keywords

elemental semiconductors; gamma-ray detection and measurement; semiconductor counters; silicon; Si; gamma irradiation; high energy physics; high-resistivity; integrated pixel detector; minimum ionizing particle; noise measurements; noise performance; readout circuitry; sensitivity; signal to single-channel noise performance; signal-charge collecting volume; strip detectors; Circuits; Electrodes; Infrared detectors; Lighting; Noise measurement; Packaging; Radiation detectors; Sensor arrays; Silicon; Spatial resolution;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.173188

Filename

173188